Description
Configuration: Half-bridge with two IGBTs + integrated diodes
Maximum collector-emitter voltage (VCE): 600V
Continuous collector current (IC): 400A
Saturation voltage VCE(on): typically 2.8V à VGE=15V, IC=400A
Maximum dissipated power: 1500W
Collector leakage current: ≤1mA
Input capacitance (Cies): ≈40nF à VCE=10V
Typical rise time (tr): 600ns
Maximum gate-emitter voltage (VGE max): ±20V
Junction temperature (TJ): –40°C to +150°C
