Description
VDS = 200 V
ID = 22 A
RDS = 0.12 Ω
L = 1,39 mH
Tj = 25 °C EAS 450mJ
VGS : ± 20 V
10 Rue Ahmed Khaireddine, Megrine Tunis – Tunisie
(+216) 29 884 366
contact@sfig.tn
Transistor de puissance SIPMOS « N-channel Mosfet »
VDS = 200 V
ID = 22 A
RDS = 0.12 Ω
L = 1,39 mH
Tj = 25 °C EAS 450mJ
VGS : ± 20 V
